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| PD - 9.1253 IRFR2605 IRFU2605 HEXFET(R) Power MOSFET Ultra Low On-Resistance ESD Protected Surface Mount (IRFR2605) Straight Lead (IRFU2605) 150C Operating Temperature Repetitive Avalanche Rated Fast Switching Description D VDSS = 55V G RDS(on) = 0.075 ID = 19A S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-PAK TO-252AA I-PAK TO-251AA Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 25C Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Human Body Model, 100pF, 1.5K Max. 19 12 76 50 3.1 0.40 0.025 20 100 12 5.0 4.5 -55 to + 150 300 (1.6mm from case) 2000 Units A W W/C V mJ A mJ V/ns C V VGS EAS IAR EAR dv/dt TJ, TSTG VESD Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB Mount)** Junction-to-Ambient Min. -- -- -- Typ. -- -- -- Max. 2.5 40 62 Units C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. IRFR2605 IRFU2605 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 3.6 --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.085 VGS = 10V, ID = 11A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 11A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 125C 10 VGS = 20V A -10 VGS = -20V 23 ID = 11A 5.4 nC VDS = 44V 10 VGS = 10V, See Fig. 6 and 13 --- VDD = 25V --- ID = 11A ns --- RG = 20 --- RD = 2.2, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact --- 420 --- VGS = 0V --- 250 --- pF VDS = 25V --- 67 --- = 1.0MHz, See Fig. 5 D G S Typ. --- 0.051 --- --- --- --- --- --- --- --- --- --- 7.1 56 31 39 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- 18 A 72 V ns C --- 1.5 67 100 0.18 0.26 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 25C, IF = 11A di/dt = 100A/s G D S Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 11A, di/dt 110A/s, V DD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. VDD = 25V, starting T J = 25C, L = 830H RG = 25, IAS = 11A. (See Figure 12) IRFR2605 IRFU2605 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , Drain-to-Source Current (A) D 10 I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 1 4.5V 1 0.1 0.01 20s PULSE WIDTH TC = 25C 0.1 1 10 1 00 A 0.1 0.01 20s PULSE WIDTH TC = 150C 0.1 1 10 100 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TC = 25oC Fig 2. Typical Output Characteristics, TC = 150oC 100 2.0 TJ = 25C R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 19A I D , Drain-to-Source Current (A) 1.5 TJ = 150C 10 1.0 0.5 1 4 5 6 7 VDS = 25V 20s PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFR2605 IRFU2605 1000 VGS , Gate-to-Source Voltage (V) 800 V GS = 0V, f = 1MHz Ciss = Cgs + C gd , Cds SHORTED Crss = C gd Coss = Cds + C gd 20 I D = 11A VDS = 44V VDS = 26V 16 C, Capacitance (pF) 600 12 Ciss 400 Coss 8 200 4 Crss 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 13 15 20 25 A V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 I SD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 ID , Drain Current (A) 100 10s TJ = 150C TJ = 25C 1 10 100s 0.1 0.0 0.4 0.8 1.2 VGS = 0V A 1.6 1 0.1 TC = 25C TJ = 150C Single Pulse 1 10 1ms A 100 1000 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFR2605 IRFU2605 VDS 20 RD VGS RG D.U.T. VDD 16 ID, Drain Current (Amps) 10 V 12 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 8 4 0 25 50 75 100 125 A 150 TC , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) N o te s : 1 . D u ty fa c to r D = t PD M t 1 t 2 1 / t2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C A 1 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFR2605 IRFU2605 EAS , Single Pulse Avalanche Energy (mJ) 200 TOP 160 10 V BOTTOM ID 4.9A 7.0A 11A Fig 12a. Unclamped Inductive Test Circuit 120 80 40 0 VDD = 25V 25 50 75 100 125 A 150 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 10 V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFR2605 IRFU2605 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG * * * * dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFR2605 IRFU2605 Package Outline D-PAK Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) -B1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) 4.57 (.180) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB 0.58 (.023) 0.46 (.018) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). Part Marking Information D-PAK EXAMPLE : THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P INTERNATIONAL RECTIFIER LOGO A IRFR 120 9U 1P FIRST PORTION OF PART NUMBER ASSEMBLY LOT CODE SECOND PORTION OF PART NUMBER WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. |
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